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Tsinghua Science and Technology

Authors

Abolfazl Amraeinia, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Yuhua Zuo, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Jun Zheng, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Zhi Liu, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Guangze Zhang, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Liping Luo, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Buwen Cheng, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Xiaoping Zou, Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Sensor, MOE Key Laboratory for Modern Measurement and Control Technology, Beijing Information Science and Technology University, Beijing 100101, China
Chunbo Li, School of Science, Minzu University of China, Beijing 100081, China

Keywords

Perovskite Solar Cell (PSC), Electron Transport Layer (ETL), electron and hole recombination, modification, stability

Abstract

Perovskite Solar Cells (PSCs) have attracted considerable attention because of their unique features and high efficiency. However, the stability of perovskite solar cells remains to be improved. In this study, we modified the TiO2 Electron Transport Layer (ETL) interface with PbCl2. The efficiency of the perovskite solar cells with carbon electrodes increased from 11.28% to 13.34%, and their stability obviously improved. The addition of PbCl2 had no effect on the morphology, crystal structure, and absorption property of the perovskite absorber layer. However, it affected the band energy level alignment of the solar cells and accelerated the electron extraction and transfer at the interface between the perovskite layer and the ETL, thus enhancing the overall photovoltaic performance. The interfacial modification of ETL with PbCl2 is a promising way for the potential commercialization of low-cost carbon electrode-based perovskite solar cells.

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