advanced process, gate-all-around devices, three-dimensional (3D) integration, high-mobility channel, integrated circuits
This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.
Zhang, Dan; Su, Xiaojing; Chang, Hao; Xu, Hao; Wang, Xiaolei; He, Xiaobin; Li, Junjie; Zhao, Fei; Yao, Qide; Luo, Yanna; Ma, Xueli; Yang, Hong; Li, Yongliang; Wu, Zhenhua; Su, Yajuan; Yang, Tao; Wei, Yayi; Du, Anyan; Zhu, Huilong; Li, Junfeng; Yin, Huaxiang; Luo, Jun; Ye, Tianchun; and Wang, Wenwu
"Advanced Process and Electron Device Technology,"
Tsinghua Science and Technology: Vol. 27:
3, Article 8.
Available at: https://dc.tsinghuajournals.com/tsinghua-science-and-technology/vol27/iss3/8