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Tsinghua Science and Technology

Authors

Dan Zhang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Xiaojing Su, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Hao Chang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Hao Xu, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Xiaobin He, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Junjie Li, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Fei Zhao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Qide Yao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Yanna Luo, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Xueli Ma, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Hong Yang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Yongliang Li, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Zhenhua Wu, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Yajuan Su, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Tao Yang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Yayi Wei, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Anyan Du, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Huilong Zhu, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Junfeng Li, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Huaxiang Yin, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Jun Luo, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Tianchun Ye, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China
Wenwu Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China

Keywords

advanced process, gate-all-around devices, three-dimensional (3D) integration, high-mobility channel, integrated circuits

Abstract

This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors (FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional (3D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.

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