Article Title
Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors
Keywords
Field-Effect Transistor (FET), compact model, ambipolar transport, Landauer formula, Pao-Sah model, virtual source
Abstract
Three main ambipolar compact models for Two-Dimensional (2D) materials based Field-Effect Transistors (2D-FETs) are reviewed: (1) Landauer model, (2) 2D Pao-Sah model, and (3) virtual Source Emission-Diffusion (VSED) model. For the Landauer model, the Gauss quadrature method is applied, and it summarizes all kinds of variants, exhibiting its state-of-art. For the 2D Pao-Sah model, the aspects of its theoretical fundamentals are rederived, and the electrostatic potentials of electrons and holes are clarified. A brief development history is compiled for the VSED model. In summary, the Landauer model is naturally appropriate for the ballistic transport of short channels, and the 2D Pao-Sah model is applicable to long-channel devices. By contrast, the VSED model offers a smooth transition between ultimate cases. These three models cover a fairly completed channel length range, which enables researchers to choose the appropriate compact model for their works.
Publisher
Tsinghua University Press
Recommended Citation
Zhaoyi Yan, Guangyang Gou, Jie Ren, Fan Wu, Yang Shen, He Tian, Yi Yang, Tian-Ling Ren. Ambipolar Transport Compact Models for Two-Dimensional Materials Based Field-Effect Transistors. Tsinghua Science and Technology 2021, 26(05): 574-591.
