Authors
Wenzhou Wu, the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 and the College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Zhi Liu, the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 and the College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Jun Zheng, the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 and the College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Yuhua Zuo, the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 and the College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Buwen Cheng, the State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 and the College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
Keywords
avalanche photodiodes, lateral structure, electric field confinement, high gain
Abstract
A novel lateral Ge/Si avalanche photodiode without a charge region is investigated herein using device physical simulation. High field is provided by the band-gap barrier and build-in field at the Ge/Si interface in the vertical direction. Modulating the Si mesa thickness (0-0.4μm) and impurity concentration of the intrinsic Si substrate (1×1016-4×1016cm-3) strengthens the electric field confinement in the substrate region and provides a high avalanche multiplication in the Si region. When the Si mesa thickness is 0.3μm, and the impurity concentration of the Si substrate is 2×1016cm-3, the Lateral Avalanche PhotoDiode (LAPD) exhibits a peak gain of 246 under 1.55μm incident light power of -22.2dBm, which increases with decreasing light intensity.
Publisher
Tsinghua University Press
Recommended Citation
Wenzhou Wu, Zhi Liu, Jun Zheng et al. Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes. Tsinghua Science and Technology 2019, 24(1): 1-8.
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