Article Title
Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection
Authors
Xiangshun Geng, School of Electrical Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
Yongqiang Yu, School of Electrical Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China (USTC), Hefei 230026, China
Xiaoli Zhou, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China (USTC), Hefei 230026, China
Chunde Wang, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China (USTC), Hefei 230026, China
Kewei Xu, School of Electrical Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
Yan Zhang, School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
Chunyan Wu, School of Electrical Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
Li Wang, School of Electrical Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
Yang Jiang, School of Materials Science and Engineering, Hefei University of Technology, Hefei 230009, China
Qing Yang, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, Laboratory of Nanomaterials for Energy Conversion and Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China (USTC), Hefei 230026, China
Keywords
molybdenum diselenide, layer transition metaldichalcogenide (TMD), urtrathin nanosheet, heterojunction, ultrafast photoresponse
Abstract
Advances in the photocurrent conversion of two-dimensional (2D) transitionmetal dichalcogenides have enabled the realization and application of ultrasensitiveand broad-spectral photodetectors. The requirements of previous devicesconstantly drive for complex technological implementation, resulting in limits inscale and complexity. Furthermore, the development of large-area and low-costphotodetectors would be beneficial for applications. Therefore, we demonstratea novel design of a heterojunction photodetector based on solution-processedultrathin MoSe2 nanosheets to satisfy the requirements of its application. Thephotodetector exhibits a high sensitivity to visible–near infrared light, with a lineardynamic range over 124 decibels (dB), a detectivity of ~1.2 × 1012 Jones, and noisecurrent approaching 0.1 pA·Hz–1/2 at zero bias. Significantly, the device showsan ultra-high response speed up to 30 ns with a 3-dB predicted bandwidth over32 MHz, which is far better than that of most of the 2D nanostructured andsolution-processable photodetectors reported thus far and is comparable to thatof commercial Si photodetectors. Combining our results with material-preparationmethods, together with the methodology of device fabrication presented herein,can provide a pathway for the large-area integration of low-cost, high-speedphotodetectors.
Graphical Abstract
Publisher
Tsinghua University Press
Recommended Citation
Xiangshun Geng,Yongqiang Yu,Xiaoli Zhou,Chunde Wang,Kewei Xu,Yan Zhang,Chunyan Wu,Li Wang,Yang Jiang,Qing Yang, Design and construction of ultra-thin MoSe2 nanosheet-based heterojunction for high-speed and low-noise photodetection. NanoRes.2016, 9(9): 2641–2651
