Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures
two-dimensional (2D)material, graphene, hexagonal boron nitride(hBN), tungsten disulphide (WS)2, heterostructure
Two-dimensional (2D) crystals have a multitude of forms, includingsemi-metals, semiconductors, and insulators, which are ideal for assemblingisolated 2D atomic materials to create van der Waals (vdW) heterostructures.Recently, artificially-stacked materials have been considered promising candidatesfor nanoelectronic and optoelectronic applications. In this study, we report thevertical integration of layered structures for the fabrication of prototypenon-volatile memory devices. A semiconducting-tungsten-disulfide-channel-basedmemory device is created by sandwiching high-density-of-states multi-layeredgraphene as a carrier-confining layer between tunnel barriers of hexagonal boronnitride (hBN) and silicon dioxide. The results reveal that a memory window of upto 20 V is opened, leading to a high current ratio (>103) between programmingand erasing states. The proposed design combination produced layered materialsthat allow devices to attain perfect retention at 13% charge loss after 10 years,offering new possibilities for the integration of transparent, flexible electronicsystems.
Tsinghua University Press
Dongri Qiu,Dong Uk Lee,Kyoung Su Lee,Sang Woo Pak,Eun Kyu Kim, Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures. NanoRes.2016, 9(8): 2319–2326