Nano Research

Article Title

Toward negligible charge loss in charge injection memories based on vertically integrated 2D heterostructures


two-dimensional (2D)material, graphene, hexagonal boron nitride(hBN), tungsten disulphide (WS)2, heterostructure


Two-dimensional (2D) crystals have a multitude of forms, includingsemi-metals, semiconductors, and insulators, which are ideal for assemblingisolated 2D atomic materials to create van der Waals (vdW) heterostructures.Recently, artificially-stacked materials have been considered promising candidatesfor nanoelectronic and optoelectronic applications. In this study, we report thevertical integration of layered structures for the fabrication of prototypenon-volatile memory devices. A semiconducting-tungsten-disulfide-channel-basedmemory device is created by sandwiching high-density-of-states multi-layeredgraphene as a carrier-confining layer between tunnel barriers of hexagonal boronnitride (hBN) and silicon dioxide. The results reveal that a memory window of upto 20 V is opened, leading to a high current ratio (>103) between programmingand erasing states. The proposed design combination produced layered materialsthat allow devices to attain perfect retention at 13% charge loss after 10 years,offering new possibilities for the integration of transparent, flexible electronicsystems.

Graphical Abstract


Tsinghua University Press