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Nano Research

Article Title

Nanoscale color sensors made on semiconducting multi-wall carbon nanotubes

Authors

Nan Wei, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
Huixin Huang, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Yang Liu, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Leijing Yang, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
Fanglin Wang, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
Huanhuan Xie, Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, TsinghuaUniversity, Beijing 100084, China
Yingying Zhang, Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, TsinghuaUniversity, Beijing 100084, China
Fei Wei, Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, TsinghuaUniversity, Beijing 100084, China
Sheng Wang, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
Lianmao Peng, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China

Keywords

color sensors, carbon nanotubes, optoelectronic devices, barrier-free bipolar diodes

Abstract

ABSTRACT Sub-micron color sensors are developed, using carbon nanotubes (CNTs). The color sensor consists of an array of two photodiodes with different spectral responses, fabricated using controlled electric peeling-off and doping-free techniques on a single semiconducting double-wall CNT. The CNT photodiodes exhibit intrinsic broad spectral responses from 640 to 2,100 nm, large linear dynamic ranges of over 60 dB, and sub-micron pixel size. This method explores the unique properties of multi-wall CNTs, and may be readily used for large-scale fabrication of high performance color sensor arrays, when arrays of parallel multi-wall CNTs become available.

Graphical Abstract

Publisher

Tsinghua University Press

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