Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions
ReSe2/MoS2, van der Waals heterojunction, rectification, optoelectronic properties
Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (Rλ) and external quantum efficiency (EQE) of 6.75 A/W and 1,266%, respectively, for the photodetector.
Tsinghua University Press
Xiaoting Wang,Le Huang,Yuting Peng,Nengjie Huo,Kedi Wu,Congxin Xia,Zhongming Wei,Sefaattin Tongay,Jingbo Li, Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions. NanoRes.2016, 9(2): 507–516