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Nano Research

Article Title

Interlayer coupling in anisotropic/isotropic van der Waals heterostructures of ReS2 and MoS2 monolayers

Authors

Mei Zhao, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China
Wenting Zhang, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei 230026, China
Manman Liu, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China
Chao Zou, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China
Keqin Yang, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China
Yun Yang, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China
Youqing Dong, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China
Lijie Zhang, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China
Shaoming Huang, College of Chemistry and Materials Engineering, Wenzhou University, Zhejiang Key Laboratory of Carbon Materials, Wenzhou 325035, China

Keywords

ReS2/MoS2 monolayers, van der Waals heterostructures, interlayer coupling interactions, optoelectronics

Abstract

ABSTRACT In-plane symmetry is an important contributor to the physical properties of two-dimensional layered materials, as well as atomically thin heterojunctions. Here, we demonstrate anisotropic/isotropic van der Waals (vdW) heterostructures of ReS2 and MoS2 monolayers, where interlayer coupling interactions and charge separation were observed by in situ Raman−photoluminescence spectroscopy, electrical, and photoelectrical measurements. We believe that these results could be helpful for understanding the fundamental physics of atomically thin vdW heterostructures and creating novel electronic and optoelectronic devices.

Graphical Abstract

Publisher

Tsinghua University Press

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