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Nano Research

Article Title

Thickness and temperature dependent electrical properties of ZrS2 thin films directly grown on hexagonal boron nitride

Keywords

chemical vapor deposition, two-dimensional materials, ZrS2, electrical transport, mobility

Abstract

ABSTRACT Two-dimensional ZrS2 materials have potential for applications in nanoelectronics because of their theoretically predicted high mobility and sheet current density. Herein, we report the thickness and temperature dependent transport properties of ZrS2 multilayers that were directly deposited on hexagonal boron nitride (h-BN) by chemical vapor deposition. Hysteresis-free gate sweeping, metalinsulator transition, and T–γ (γ ~ 0.82–1.26) temperature dependent mobility were observed in the ZrS2 films.

Graphical Abstract

Publisher

Tsinghua University Press

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