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Nano Research

Article Title

Interfacial state induced ultrasensitive ultraviolet light photodetector with resolved flux down to 85 photons per second

Authors

Yong-Qiang Yu, School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
Lin-Bao Luo, School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
Ming-Zheng Wang, School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
Bo Wang, School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
Long-Hui Zeng, School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
Chun-Yan Wu, School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
Jian-Sheng Jie, Institute of Functional Nano & Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, China
Jian-Wei Liu, Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei 230026, China
Li Wang, School of Electronic Science and Applied Physics, Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, Hefei University of Technology, Hefei, Anhui 230009, China
Shu-Hong Yu, Division of Nanomaterials & Chemistry, Hefei National Laboratory for Physical Sciences at Microscale, Department of Chemistry, University of Science and Technology of China, Hefei 230026, China

Keywords

II–VI group, detectivity, Schottky barrier diode, optoelectronic device, interfacial states

Abstract

We present an ultrasensitive ultraviolet (UV) detector based on a p-type ZnS nanoribbon (NR)/indium tin oxide (ITO) Schottky barrier diode (SBD). The device exhibits a pseudo-photovoltaic behavior which can allow the SBD to detect UV light irradiation with incident power of 6 × 10–17 W (~85 photons/s on the NR) at room temperature, with excellent reproducibility and stability. The corresponding detectivity and photoconductive gain are calculated to be 3.1 × 1020 cm·Hz1/2·W–1 and 6.6 × 105, respectively. It is found that the presence of the trapping states at the p-ZnS NR/ITO interface plays a crucial role in determining the ultrahigh sensitivity of this nanoSBDs. Based on our theoretical calculation, even ultra-low photon fluxes on the order of several tens of photons could induce a significant change in interface potential and consequently cause a large photocurrent variation. The present study provides new opportunities for developing high-performance optoelectronic devices in the future.

Graphical Abstract

Publisher

Tsinghua University Press

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