Article Title

Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors

Authors

Eunhye Baek, Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany
Sebastian Pregl, Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany
Mehrdad Shaygan, Division of IT Convergence Engineering, Pohang University of Science and Technology, Pohang, Korea
Lotta Rmhildt, Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany
Walter M. Weber, Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany NaMLab GmbH, Nthnitzer Strasse 64, 01187 Dresden, Germany
Thomas Mikolajick, Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany NaMLab GmbH, Nthnitzer Strasse 64, 01187 Dresden, Germany
Dmitry A. Ryndyk, Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany Dresden Center for Computational Materials Science, TU Dresden, 01062 Dresden, Germany
Larysa Baraban, Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany
Gianaurelio Cuniberti, Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany Dresden Center for Computational Materials Science, TU Dresden, 01062 Dresden, Germany

Keywords

hybrid nanoelectronics, silicon nanowire field-effect transistors, porphyrin, optoelectronic switching, organic/oxide/ semiconductor junctions

Abstract

A novel photosensitive hybrid field-effect transistor (FET) which consists of a multiple-shell of organic porphyrin film/oxide/silicon nanowires is presented. Due to the oxide shell around the nanowires, photoswitching of the current in the hybrid nanodevices is guided by the electric field effect, induced by charge redistribution within the organic film. This principle is an alternative to a photoinduced electron injection, valid for devices relying on direct junctions between organic molecules and metals or semiconductors. The switching dynamics of the hybrid nanodevices upon violet light illumination is investigated and a strong dependence on the thickness of the porphyrin film wrapping the nanowires is found. Furthermore, the thickness of the organic films is found to be a crucial parameter also for the switching efficiency of the nanowire FET, represented by the ratio of currents under light illumination (ON) and in dark conditions (OFF). We suggest a simple model of porphyrin film charging to explain the optoelectronic behavior of nanowire FETs mediated by organic film/oxide/semiconductor junctions.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-014-0608-7

Publisher

Tsinghua University Press

Recommended Citation

Eunhye Baek,Sebastian Pregl,Mehrdad Shaygan,Lotta Römhildt,Walter M. Weber,Thomas Mikolajick,Dmitry A. Ryndyk,Larysa Baraban,Gianaurelio Cuniberti, Optoelectronic switching of nanowire-based hybrid organic/oxide/semiconductor field-effect transistors. NanoRes.2015, 8(4): 1229–1240