Tunnel junctions in a III–V nanowire by surface engineering
semiconductor nanowire, tunnel junction, indium arsenide compounds, doping, III–V semiconductors
We demonstrate a simple way of fabricating high performance tunnel devices from p-doped InAs nanowires by tailoring the n-doped surface accumulation layer inherent to InAs surfaces. By using appropriate ammonium sulfide based surface passivation before metallization without any further thermal treatment, we demonstrate characteristics of tunnel p–n junctions, namely Esaki and backward diodes, with figures of merit better than previously published for InAs homojunctions. The further optimization of both the surface doping, in a quantitative way, and the device geometry allows us to demonstrate that these nanowire-based technologically-simple diodes have promising direct current characteristics for integrated high frequency detection or generation.
Tsinghua University Press
Salman Nadar,Chloé Rolland,Jean-François Lampin,Xavier Wallart,Philippe Caroff,Renaud Leturcq, Tunnel junctions in a III–V nanowire by surface engineering. NanoRes.2015, 8(3): 980–989