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Nano Research

Article Title

Piezoelectricity in two-dimensional group-III monochalcogenides

Keywords

piezoelectricity, two-dimensional (2D) material, monochalcogenide, density functional theory (DFT) calculation

Abstract

It is found that several layer-phase group-III monochalcogenides, including GaS, GaSe, and InSe, are piezoelectric in their monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe, and InSe (2.06, 2.30, and 1.46 pm·V–1) are of the same order of magnitude as previously discovered two-dimensional (2D) piezoelectric materials such as boron nitride (BN) and MoS2 monolayers. This study therefore indicates that a strong piezoelectric response can be obtained in a wide range of two-dimensional materials with broken inversion symmetry. The co-existence of piezoelectricity and superior photo-sensitivity in these monochalcogenide monolayer semiconductors means they have the potential to allow for the integration of electromechanical and optical sensors on the same material platform.

Graphical Abstract

Publisher

Tsinghua University Press

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