A universal etching-free transfer of MoS2 films for applications in photodetectors
MoS2, etching-free, efficient transfer, ultrasonic bubbling, environmental friendliness
ABSTRACT Transferring MoS2 films from growth substrates onto target substrates is a critical issue for their practical applications. Moreover, it remains a great challenge to avoid sample degradation and substrate destruction, because the current transfer method inevitably employs a wet chemical etching process. We developed an etching-free transfer method for transferring MoS2 films onto arbitrary substrates by using ultrasonication. Briefly, the collapse of ultrasonication-generated microbubbles at the interface between polymer-coated MoS2 film and substrates induce sufficient force to delaminate the MoS2 films. Using this method, the MoS2 films can be transferred from all substrates (silica, mica, strontium titanate, and sapphire) and retains the original sample morphology and quality. This method guarantees a simple transfer process and allows the reuse of growth substrates, without involving any hazardous etchants. The etching-free transfer method is likely to promote broad applications of MoS2 in photodetectors.
Tsinghua University Press
Donglin Ma,Jianping Shi,Qingqing Ji,Ke Chen,Jianbo Yin,Yuanwei Lin,Yu Zhang,Mengxi Liu,Qingliang Feng,Xiuju Song,Xuefeng Guo,Jin Zhang,Yanfeng Zhang,Zhongfan Liu, A universal etching-free transfer of MoS2 films for applications in photodetectors. NanoRes.2015, 8(11): 3662–3672