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Nano Research

Article Title

Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation

Authors

Xiuju Song, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Junfeng Gao, Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong, China
Yufeng Nie, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Teng Gao, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Jingyu Sun, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Donglin Ma, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Qiucheng Li, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Yubin Chen, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Chuanhong Jin, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Alicja Bachmatiuk, Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie-Sklodowskiej 34, Zabrze 41-819, Poland
Mark H. Rümmeli, Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Daejon 305-701, Republic of Korea
Feng Ding, Institute of Textiles and Clothing, Hong Kong Polytechnic University, Hong Kong, China
Yanfeng Zhang, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
Zhongfan Liu, Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Low Dimensional Carbon Materials, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China

Keywords

hexagonal boron nitride, Cu foil, domain size, orientation, chemical vapor deposition (CVD)

Abstract

Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to ~72 μm in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.

Graphical Abstract

Publisher

Tsinghua University Press

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