•  
  •  
 
Nano Research

Article Title

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

Authors

Xiang Yuan, State Key Laboratory of Surface Physics and Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
Lei Tang, State Key Laboratory of Surface Physics and Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
Peng Wang, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Zhigang Chen, Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia
Yichao Zou, Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia
Xiaofeng Su, Satellite Remote Sensing Laboratory, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Cheng Zhang, State Key Laboratory of Surface Physics and Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
Yanwen Liu, State Key Laboratory of Surface Physics and Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
Weiyi Wang, State Key Laboratory of Surface Physics and Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China
Cong Liu, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Fansheng Chen, Satellite Remote Sensing Laboratory, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Jin Zou, Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072, Australia
Peng Zhou, State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433, China
Weida Hu, National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
and Faxian Xiu, State Key Laboratory of Surface Physics and Department of Physics, and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China

Keywords

GaTe, wafer-scale two-dimensional materials, p-n junction, imaging, photodiode, photosensor

Abstract

Two-dimensional (2D) materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm2/(V·s) by molecular beam epitaxy. The arrayed p-n junctions were developed by growing few-layer GaTe directly on three-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.

Graphical Abstract

Publisher

Tsinghua University Press

Share

COinS