Article Title

Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM

Authors

Xuezeng Tian, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Lifen Wang, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Jiake Wei, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Shize Yang, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Wenlong Wang, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Zhi Xu, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Xuedong Bai, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Keywords

resistive switching, conductive filaments, in situ transmission electron microscope, real-time observation, computer simulation

Abstract

Solid electrolyte based-resistive memories have been considered to be a potential candidate for future information technology with applications in non-volatile memory, logic circuits and neuromorphic computing. A conductive filament model has been generally accepted to be the underlying mechanism for the resistive switching. However, the growth dynamics of such conductive filaments is still not fully understood. Here, we explore the controllability of filament growth by correlating observations of the filament growth with the electric field distribution and several other factors. The filament growth behavior has been recorded using in situ transmission electron microscopy. By studying the realtime recorded filament growth behavior and morphologies, we have been able to simulate the electric field distribution in accordance with our observations. Other factors have also been shown to affect the filament growth, such as Joule heating and electrolyte infrastructure. This work provides insight into the controllable growth of conductive filaments and will help guide research into further functionalities of nanoionic resistive memories.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-014-0469-0

Publisher

Tsinghua University Press

Recommended Citation

Xuezeng Tian,Lifen Wang,Jiake Wei,Shize Yang,Wenlong Wang,Zhi Xu,Xuedong Bai, Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM. NanoRes.2014, 7(7): 1065–1072