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Nano Research

Article Title

Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization

Authors

Wanglin Lu, State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Haiyan Nan, Department of Physics, Southeast University, Nanjing 211189, China
Jinhua Hong, State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Yuming Chen, Department of Physics, Southeast University, Nanjing 211189, China
Chen Zhu, State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Zheng Liang, Graphene Research and Characterization Center, Taizhou Sunano New Energy Co., Ltd. Taizhou 225300, China
Xiangyang Ma, State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Zhenhua Ni, Department of Physics, Southeast University, Nanjing 211189, China
Chuanhong Jin, State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
Ze Zhang, State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Keywords

Mechanical cleavage, monolayer phosphorene, two-dimensional semiconductor, plasma thinning, optical contrast, Raman spectroscopy

Abstract

There have been continuous efforts to seek novel functional two-dimensional semiconductors with high performance for future applications in nanoelectronics and optoelectronics. In this work, we introduce a successful experimental approach to fabricate monolayer phosphorene by mechanical cleavage and a subsequent Ar+ plasma thinning process. The thickness of phosphorene is unambiguously determined by optical contrast spectra combined with atomic force microscopy (AFM). Raman spectroscopy is used to characterize the pristine and plasma-treated samples. The Raman frequency of the A2g mode stiffens, and the intensity ratio of A2g to A1g modes shows a monotonic discrete increase with the decrease of phosphorene thickness down to a monolayer. All those phenomena can be used to identify the thickness of this novel two-dimensional semiconductor. This work on monolayer phosphorene fabrication and thickness determination will facilitate future research on phosphorene.

Graphical Abstract

Publisher

Tsinghua University Press

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