Growth of silicon nanowires in aqueous solution under atmospheric pressure
Silicon nanowire, solution process, metal catalyst, hexagonal crystalline phase
A new method for growing silicon nanowires is presented. They were grown in an aqueous solution at a temperature of 85 °C under atmospheric pressure by using sodium methylsiliconate as a water-soluble silicon precursor. The structure, morphology, and composition of the as-grown nanowires were characterized by scanning electron microscopy, transmission electron microscopy, and energy dispersive X-ray spectrometry. It was also confirmed by X-ray powder diffraction and Raman spectroscopy that the silicon nanowire has a hexagonal structure. It was possible to grow the crystalline silicon nanowires at low temperature under atmospheric pressure because potassium iodide, which was used as a gold etchant, sufficiently increased the surface energy and reactivity of gold as a metal catalyst for the reaction of the Si precursor even at low temperature.
Tsinghua University Press
Nae-Man Park,Chel-Jong Choi, Growth of silicon nanowires in aqueous solution under atmospheric pressure. NanoRes.2014, 7(6): 898–902