Article Title
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
Authors
Pingan Hu, Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No. 2 Yikuang Street, Harbin, 150080, China
Jia Zhang, Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No. 2 Yikuang Street, Harbin, 150080, China
Mina Yoon, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, One Bethel Valley Road, Oak Ridge, TN, 37831, USA
Xiao-Fen Qiao, State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Xin Zhang, State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Wei Feng, Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No. 2 Yikuang Street, Harbin, 150080, China
Pingheng Tan, State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Wei Zheng, Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No. 2 Yikuang Street, Harbin, 150080, China
Jingjing Liu, Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No. 2 Yikuang Street, Harbin, 150080, China
Xiaona Wang, Key Lab of Microsystem and Microstructure, Harbin Institute of Technology, Ministry of Education, No. 2 Yikuang Street, Harbin, 150080, China
Juan C. Idrobo, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, One Bethel Valley Road, Oak Ridge, TN, 37831, USA
David B. Geohegan, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, One Bethel Valley Road, Oak Ridge, TN, 37831, USA
Kai Xiao, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, One Bethel Valley Road, Oak Ridge, TN, 37831, USA
Keywords
photodetector, gallium telluride, two-dimensional, semiconductor, nanosheet
Abstract
Highly sensitive phototransistors based on two-dimensional (2D) GaTe nanosheet have been demonstrated. The performance (photoresponsivity, detectivity) of the GaTe nanosheet phototransistor can be efficiently adjusted by using the applied gate voltage. The devices exhibit an ultrahigh photoresponsivity of 274.3 AW–1. The detectivity of 2D GaTe devices is ~1012 Jones, which surpasses that of currently-exploited InGaAs photodetectors (1011–1012 Jones). To reveal the origin of the enhanced photocurrent in GaTe nanosheets, theoretical modeling of the electronic structures was performed to show that GaTe nanosheets also have a direct bandgap structure, which contributes to the promotion of photon absorption and generation of excitons. This work shows that GaTe nanosheets are promising materials for high performance photodetectors.
Graphical Abstract
Publisher
Tsinghua University Press
Recommended Citation
Pingan Hu,Jia Zhang,Mina Yoon,Xiao-Fen Qiao,Xin Zhang,Wei Feng,Pingheng Tan,Wei Zheng,Jingjing Liu,Xiaona Wang,Juan C. Idrobo,David B. Geohegan,Kai Xiao, Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap. NanoRes.2014, 7(5): 694–703
