Article Title

Chemical vapor deposition growth of monolayer MoSe₂ nanosheets

Authors

Jonathan C. Shaw, Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA
Hailong Zhou, Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA
Yu Chen, Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095, USA
Nathan O. Weiss, Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095, USA
Yuan Liu, Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095, USA
Yu Huang, Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095, USA California NanoSystems Institute, University of California, Los Angeles, CA 90095, USA
Xiangfeng Duan, Department of Chemistry and Biochemistry, University of California, Los Angeles, CA 90095, USA California NanoSystems Institute, University of California, Los Angeles, CA 90095, USA

Keywords

chemical vapor deposition, molybdenum diselenide, two-dimensional materials, transition metal dichalcogenide, layered materials, semiconductor

Abstract

ABSTRACT The synthesis of two-dimensional (2D) layered materials with controllable thickness is of considerable interest for diverse applications. Here we report the first chemical vapor deposition growth of single- and few-layer MoSe2 nanosheets. By using Se and MoO3 as the chemical vapor supply, we demonstrate that highly crystalline MoSe2 can be directly grown on the 300 nm SiO2/Si substrates to form optically distinguishable single- and multi-layer nanosheets, typically in triangular shaped domains with edge lengths around 30 μm, which can merge into continuous thin films upon further growth. Micro-Raman spectroscopy and imaging was used to probe the thickness-dependent vibrational properties. Photoluminescence spectroscopy demonstrates that MoSe2 monolayers exhibit strong near band edge emission at 1.55 eV, while bilayers or multi-layers exhibit much weaker emission, indicating of the transition to a direct band gap semiconductor as the thickness is reduced to a monolayer.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-014-0417-z

Publisher

Tsinghua University Press

Recommended Citation

Jonathan C. Shaw,Hailong Zhou,Yu Chen,Nathan O. Weiss,Yuan Liu,Yu Huang,Xiangfeng Duan, Chemical vapor deposition growth of monolayer MoSe2 nanosheets. NanoRes.2014, 7(4): 511–517