Article Title
Large thermal biasing of individual gated nanostructures
Authors
Stefano Roddaro, NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
Istituto Officina dei Materiali – CNR, Basovizza S.S. 14 km 163.5, I-34149 Trieste, Italy
Daniele Ercolani, NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
Mian Akif Safeen, NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
Francesco Rossella, NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
Vincenzo Piazza, Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Piazza San Silvestro 12, 56127 Pisa, Italy
Francesco Giazotto, NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
Lucia Sorba, NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
Fabio Beltram, NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Piazza S. Silvestro 12, I-56127 Pisa, Italy
Keywords
thermoelectric and thermomagnetic effects, field effect devices, nanowires
Abstract
We demonstrate very large and uniform temperature gradients up to about 1 K every 100 nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated greatly exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.
Graphical Abstract

Publisher
Tsinghua University Press
Recommended Citation
Stefano Roddaro,Daniele Ercolani,Mian Akif Safeen,Francesco Rossella,Vincenzo Piazza,Francesco Giazotto,Lucia Sorba,Fabio Beltram, Large thermal biasing of individual gated nanostructures. NanoRes.2014, 7(3): 579–587
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