
Article Title
Tunable D peak in gated graphene
Keywords
graphene, gating, defects, doping, electro-chemistry
Abstract
We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electro-chemical reaction involving the water layer trapped at the interface between silicon and graphene.
Publisher
Tsinghua University Press
Recommended Citation
Anna Ott, Ivan A. Verzhbitskiy, Joseph Clough, Axel Eckmann, Thanasis Georgiou, Cinzia Casiraghi. Tunable D peak in gated graphene. Nano Res.2014, 7(3): 338–344.