"Tunable D peak in gated graphene" by Anna Ott, Ivan A. Verzhbitskiy et al.

Article Title

Tunable D peak in gated graphene

Authors

Anna Ott, Physics Department, Freie Universitt Berlin, Berlin 14195, Germany
Ivan A. Verzhbitskiy, Physics Department, Freie Universitt Berlin, Berlin 14195, Germany
Joseph Clough, School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
Axel Eckmann, School of Chemistry, University of Manchester, Manchester M13 9PL, UK
Thanasis Georgiou, School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
Cinzia Casiraghi, Physics Department, Freie Universitt Berlin, Berlin 14195, Germany School of Chemistry, University of Manchester, Manchester M13 9PL, UK

Keywords

graphene, gating, defects, doping, electro-chemistry

Abstract

We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electro-chemical reaction involving the water layer trapped at the interface between silicon and graphene.

DOI

https://doi.org/10.1007/s12274-013-0399-2

Publisher

Tsinghua University Press

Recommended Citation

Anna Ott, Ivan A. Verzhbitskiy, Joseph Clough, Axel Eckmann, Thanasis Georgiou, Cinzia Casiraghi. Tunable D peak in gated graphene. Nano Res.2014, 7(3): 338–344.

Link to Full Text

Request a Copy

COinS