Article Title

Ladder-like metal oxide nanowires: Synthesis, electrical transport, and enhanced light absorption properties

Authors

Bo Liang, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Hongtao Huang, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Zhe Liu, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Gui Chen, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Gang Yu, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Tao Luo, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Lei Liao, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430074, China
Di Chen, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
Guozhen Shen, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Keywords

In2O3, SnO2, nanowires, field-effect transistors, photodetectors, finite-difference time-domain

Abstract

Transparent metal oxide nanowires (NWs) have attracted intense research interest in recent years. We report here the synthesis of interesting ladder-like metal oxide NWs, including In2O3, SnO2, ZnO, and Ga2O3, via a facile chemical vapor deposition (CVD) method. Their structural features and growth mechanism are demonstrated in detail by using the ladder-like In2O3 NWs as an example. Single ladder-like NW-based field-effect transistors (FETs) and photodetectors (PDs) of SnO2 were fabricated in order to investigate their electrical transport and light absorption properties. Compared with straight NW-based FETs which operate in an enhancement mode (E-mode), FETs build on ladder-like NWs operate in a depletion mode (D-mode). The ladder-like NWs also give higher carrier concentrations than conventional single nanowires. Finite-difference time-domain (FDTD) simulations have been performed on the ladder-like NWs and the results reveal a great enhancement of light absorption with both transverse-electric (TE) and transverse-magnetic (TM) polarization modes, which is in good agreement with the experimental results.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-013-0394-7

Publisher

Tsinghua University Press

Recommended Citation

Bo Liang,Hongtao Huang,Zhe Liu,Gui Chen,Gang Yu,Tao Luo,Lei Liao,Di Chen,Guozhen Shen, Ladder-like metal oxide nanowires: Synthesis, electrical transport, and enhanced light absorption properties. NanoRes.2014, 7(2): 272–283