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Nano Research

Article Title

III–V semiconductor nanocrystal formation in silicon nanowires via liquid-phase epitaxy

Authors

Slawomir Prucnal, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, Dresden 01314, Germany
Markus Glaser, Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, Vienna 1040, Austria
Alois Lugstein, Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, Vienna 1040, Austria
Emmerich Bertagnolli, Institute of Solid State Electronics, Vienna University of Technology, Floragasse 7, Vienna 1040, Austria
Michael Stger-Pollach, USTEM, Vienna University of Technology, Wiedner Hauptstrae 8-10, Vienna 1040, Austria
Shengqiang Zhou, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, Dresden 01314, Germany
Manfred Helm, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, Dresden 01314, Germany Center for Advancing Electronics Dresden, Technische Universitt Dresden, Dresden 01062, Germany
Denis Reichel, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, Dresden 01314, Germany
Lars Rebohle, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, Dresden 01314, Germany
Marcin Turek, Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, Lublin 20-035, Poland
Jerzy Zuk, Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, Lublin 20-035, Poland
Wolfgang Skorupa, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, Dresden 01314, Germany

Keywords

liquid phase epitaxy, InAs, hetero-nanowires, silicon, ion implantation

Abstract

Direct integration of high-mobility III–V compound semiconductors with existing Si-based complementary metal–oxide–semiconductor (CMOS) processing platforms presents the main challenge to increasing the CMOS performance and the scaling trend. Silicon hetero-nanowires with integrated III–V segments are one of the most promising candidates for advanced nano-optoelectronics, as first demonstrated using molecular beam epitaxy techniques. Here we demonstrate a novel route for InAs/Si hybrid nanowire fabrication via millisecond range liquid-phase epitaxy regrowth using sequential ion beam implantation and flash-lamp annealing. We show that such highly mismatched systems can be monolithically integrated within a single nanowire. Optical and microstructural investigations confirm the high quality hetero-nanowire fabrication coupled with the formation of atomically sharp interfaces between Si and InAs segments. Such hybrid systems open new routes for future high-speed and multifunctional nanoelectronic devices on a single chip.

Graphical Abstract

Publisher

Tsinghua University Press

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