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Nano Research

Article Title

Modulating the threshold voltage of oxide nanowire field-effect transistors by a Ga+ ion beam

Authors

Wenqing Li, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Lei Liao, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Xiangheng Xiao, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Xinyue Zhao, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Zhigao Dai, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Shishang Guo, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Wei Wu, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Ying Shi, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Jinxia Xu, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Feng Ren, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China
Changzhong Jiang, Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, China

Keywords

nanowire, field-effect transistor, ion irradiation, threshold voltage

Abstract

In this paper, we report a method to change the threshold voltage of SnO2 and In2O3 nanowire transistors by Ga+ ion irradiation. Unlike the results in earlier reports, the threshold voltages of SnO2 and In2O3 nanowire field-effect transistors (FETs) shift in the negative gate voltage direction after Ga+ ion irradiation. Smaller threshold voltages, achieved by Ga+ ion irradiation, are required for high-performance and low-voltage operation. The threshold voltage shift can be attributed to the degradation of surface defects caused by Ga+ ion irradiation. After irradiation, the current on/off ratio declines slightly, but is still close to ~106. The results indicate that Ga+ ion beam irradiation plays a vital role in improving the performance of oxide nanowire FETs.

Graphical Abstract

Publisher

Tsinghua University Press

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