Article Title

Fabrication of high-quality all-graphene devices with low contact resistances

Authors

Rong Yang, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Shuang Wu, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Duoming Wang, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Guibai Xie, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Meng Cheng, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Guole Wang, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Wei Yang, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Peng Chen, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Dongxia Shi, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Guangyu Zhang, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Collaborative Innovation Center of Quantum Matter, Beijing 100190, China

Keywords

graphene, all-graphene devices, thinning, contact resistance

Abstract

All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature (RT) between a bilayer graphene channel and a multilayer graphene electrode can be as low as ~5 Ω·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-014-0504-1

Publisher

Tsinghua University Press

Recommended Citation

Rong Yang,Shuang Wu,Duoming Wang,Guibai Xie,Meng Cheng,Guole Wang,Wei Yang,Peng Chen,Dongxia Shi,Guangyu Zhang, Fabrication of high-quality all-graphene devices with low contact resistances. NanoRes.2014, 7(10): 1449–1456