Fabrication of high-quality all-graphene devices with low contact resistances
graphene, all-graphene devices, thinning, contact resistance
All-graphene devices are new class of graphene devices with simple layouts and low contact resistances. Here we report a clean fabrication strategy for all-graphene devices via a defect-assisted anisotropic etching. The as-fabricated graphene is free of contamination and retains the quality of pristine graphene. The contact resistance at room temperature (RT) between a bilayer graphene channel and a multilayer graphene electrode can be as low as ~5 Ω·μm, the lowest ever achieved experimentally. Our results suggest the feasibility of employing such all-graphene devices in high performance carbon-based integrated circuits.
Tsinghua University Press
Rong Yang,Shuang Wu,Duoming Wang,Guibai Xie,Meng Cheng,Guole Wang,Wei Yang,Peng Chen,Dongxia Shi,Guangyu Zhang, Fabrication of high-quality all-graphene devices with low contact resistances. NanoRes.2014, 7(10): 1449–1456