Article Title
Fabrication of large area hexagonal boron nitride thin films for bendable capacitors
Authors
Ning Guo, Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Jinquan Wei, Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Yi Jia, Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Huanhuan Sun, Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Yuhang Wang, Department of Physics, Tsinghua University, Beijing 100084, China
Kehan Zhao, Department of Physics, Tsinghua University, Beijing 100084, China
Xiaolan Shi, Department of Physics, Tsinghua University, Beijing 100084, China
Liuwan Zhang, Department of Physics, Tsinghua University, Beijing 100084, China
Xinming Li, Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Anyuan Cao, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, China
Hongwei Zhu, Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Kunlin Wang, Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Dehai Wu, Key Lab for Advanced Materials Processing Technology of Education Ministry, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Keywords
hexagonal boron nitride, capacitor, breakdown strength, tunneling effect
Abstract
Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride (h-BN) can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of ~9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 μF/cm2, which is one order of magnitude higher than the calculated value.
Graphical Abstract
Publisher
Tsinghua University Press
Recommended Citation
Ning Guo,Jinquan Wei,Yi Jia,Huanhuan Sun,Yuhang Wang,Kehan Zhao,Xiaolan Shi,Liuwan Zhang,Xinming Li,Anyuan Cao,Hongwei Zhu,Kunlin Wang,Dehai Wu, Fabrication of large area hexagonal boron nitride thin films for bendable capacitors. NanoRes.2013, 6(7): 602–610
