Article Title

Raman scattering study of the phonon dispersion in twisted bilayer graphene

Authors

Jessica Campos-Delgado, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, Louvain-la-Neuve, 1348, Belgium
Luiz G. Canado, Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil
Carlos A. Achete, Diviso de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Xerém, RJ, 25250-020, Brazil
Ado Jorio, Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, 30123-970, Brazil
Jean-Pierre Raskin, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Université catholique de Louvain, Louvain-la-Neuve, 1348, Belgium

Keywords

twisted bilayer graphene, Raman spectroscopy, phonon branches

Abstract

Bilayer graphene with a twist angle θ between the layers generates a superlattice structure known as a Moiré pattern. This superlattice provides a θ-dependent q wavevector that activates phonons in the interior of the Brillouin zone. Here we show that this superlattice-induced Raman scattering can be used to probe the phonon dispersion in twisted bilayer graphene (tBLG). The effect reported here is different from the widely studied double-resonance in graphene-related materials in many aspects, and despite the absence of stacking order in tBLG, layer breathing vibrations (namely ZO’ phonons) are observed.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-013-0304-z

Publisher

Tsinghua University Press

Recommended Citation

Jessica Campos-Delgado,Luiz G. Cançado,Carlos A. Achete,Ado Jorio,Jean-Pierre Raskin, Raman scattering study of the phonon dispersion in twisted bilayer graphene. NanoRes.2013, 6(4): 269–274