Article Title

Wafer scale direct-write of Ge and Si nanostructures with conducting stamps and a modified mask aligner

Authors

Hideki Sato, Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA Japan Patent Office, Tokyo 100-8915, Japan
Stephanie E. Vasko, Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA Department of Chemistry, University of Washington, Seattle, WA 98195, USA
Marco Rolandi, Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, USA

Keywords

Ge, Si, nanolithography, microcontact printing, scanning probe lithography

Abstract

The broad availability of high throughput nanostructure fabrication is essential for advancement in nanoscale science. Large-scale manufacturing developed by the semiconductor industry is often too resource-intensive for medium scale laboratory prototyping. We demonstrate the inexpensive wafer scale directwrite of Ge and Si nanostructures with a 4-inch mask aligner retrofitted with a conducting microstructured stamp. A bias applied between the stamp and an underlying silicon substrate results in the reaction of diphenylgermane and diphenylsilane precursors at the stamp–substrate interface to yield the directwrite of Ge and Si nanostructures in determined locations. With the increasing number of outdated mask aligners available from the semiconductor industry and an extensive library of liquid precursors, this strategy provides facile, inexpensive, wafer scale semiconductor direct-write for applications such as electronics, photonics, and photovoltaics.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-013-0302-1

Publisher

Tsinghua University Press

Recommended Citation

Hideki Sato,Stephanie E. Vasko,Marco Rolandi, Wafer scale direct-write of Ge and Si nanostructures with conducting stamps and a modified mask aligner. NanoRes.2013, 6(4): 263–268