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Nano Research

Article Title

An innovative way of etching MoS2: Characterization and mechanistic investigation

Authors

Yuan Huang, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore
Jing Wu, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore
Xiangfan Xu, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore
Yuda Ho, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore
Guangxin Ni, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore
Qiang Zou, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
Gavin Kok Wai Koon, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore
Weijie Zhao, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore Department of Chemistry, National University of Singapore, 6 Science Drive 2, 117546 Singapore
A. H. Castro Neto, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore NUS Graduate School for Integrative Sciences and Engineering (NGS), Centre for Life Sciences (CeLS), 28 Medical Drive, 117456 Singapore
Goki Eda, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore Department of Chemistry, National University of Singapore, 6 Science Drive 2, 117546 Singapore
Chengmin Shen, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190 China
Barbaros zyilmaz, Department of Physics, 2 Science Drive 3, National University of Singapore, 117542 Singapore Graphene Research Centre, 6 Science Drive 2, National University of Singapore, 117542 Singapore Nanocore, 4 Engineering Drive 3, National University of Singapore, 117576 Singapore NUS Graduate School for Integrative Sciences and Engineering (NGS), Centre for Life Sciences (CeLS), 28 Medical Drive, 117456 Singapore

Keywords

MoS2, etching, XeF2, graphene, photoluminescence, hexagonal

Abstract

We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots, and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.

Graphical Abstract

Publisher

Tsinghua University Press

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