Article Title

Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films

Authors

Hao Long, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Yang Wei, Department of Physics and Tsinghua–Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Tongjun Yu, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Zhe Wang, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Chuanyu Jia, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Zhijian Yang, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Guoyi Zhang, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Shoushan Fan, Department of Physics and Tsinghua–Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China

Keywords

Gallium nitride, carbon nanotubes, light emitting diode (LED), metalorganic vapour phase epitaxy (MOVPE)

Abstract

A novel carbon nanotube-patterned sapphire substrate (CPSS) has been utilized for the growth of GaN material and fabrication of a InGaN/GaN light emitting diode (LED) by metal–organic vapor phase epitaxy. Different lateral strain distributions and stress reductions were observed in a GaN thin film on CPSS compared with those on a conventional sapphire substrate. Nanoheteroepitaxy induced by small size nucleation islands of about 50 nm is ascribed to this significant strain modulation. The crystalline quality of the GaN thin film was also improved, as illustrated by X-ray diffraction. Performances of 1 mm × 1 mm LEDs on CPSS were also enhanced, with an operational power increase of 37.5% and higher saturation current.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-012-0250-1

Publisher

Tsinghua University Press

Recommended Citation

Hao Long,Yang Wei,Tongjun Yu,Zhe Wang,Chuanyu Jia,Zhijian Yang,Guoyi Zhang,Shoushan Fan, Modulating lateral strain in GaN-based epitaxial layers by patterning sapphire substrates with aligned carbon nanotube films. NanoRes.2012, 5(9): 646–653