Article Title

A facile tool for the characterization of two-dimensional materials grown by chemical vapor deposition

Authors

Mario Hofmann, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, MA02139-4307, USA
Yong Cheol Shin, Massachusetts Institute of Technology, Department of Materials Science and Engineering, Cambridge, MA02139-4307, USA
Ya-Ping Hsieh, Chung-Cheng University, Graduate Institute of Opto-Mechatronics
Mildred S. Dresselhaus, Massachusetts Institute of Technology, Department of Physics, Cambridge, MA02139-4307, USA
Jing Kong, Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, Cambridge, MA02139-4307, USA

Keywords

Two-dimensional materials, graphene, analysis, chemical vapor deposition

Abstract

ABSTRACT The metrology of two-dimensional (2D) materials such as graphene, boron nitride or molybdenum disulfide grown by chemical vapor deposition (CVD) is critical for the optimization of their synthesis. We demonstrate the use of film-induced frustrated etching (FIFE) as a facile, scalable method to reveal and quantify structural defects in continuous thin sheets. The sensitivity of the analysis technique to intentionally induced lattice defects in graphene compares favorably to the sensitivity of Raman spectroscopy. A strong correlation between the measured defectiveness and the maximum carrier mobility in graphene emphasizes the importance of the technique for growth optimization. Due to its ease and widespread availability, we anticipate that FIFE will find wide application in the characterization of CVD-synthesized 2D materials.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-012-0227-0

Publisher

Tsinghua University Press

Recommended Citation

Mario Hofmann,Yong Cheol Shin,Ya-Ping Hsieh,Mildred S. Dresselhaus,Jing Kong, A facile tool for the characterization of two-dimensional materials grown by chemical vapor deposition. NanoRes.2012, 5(7): 504–511