Article Title

Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes

Authors

Justin Wu, Department of Chemistry, Stanford University, Stanford, CA 94305, USA
Liming Xie, Department of Chemistry, Stanford University, Stanford, CA 94305, USA
Guosong Hong, Department of Chemistry, Stanford University, Stanford, CA 94305, USA
Hong En Lim, Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya 464-8602, Japan
Boanerges Thendie, Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya 464-8602, Japan
Yasumitsu Miyata, Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya 464-8602, Japan
Hisanori Shinohara, Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya 464-8602, Japan
Hongjie Dai, Department of Chemistry, Stanford University, Stanford, CA 94305, USA

Keywords

Single-walled carbon nanotubes, separation, Raman spectroscopy, field-effect transistor

Abstract

ABSTRACT Semiconducting single-walled carbon nanotubes (s-SWNTs) with a purity of ~98% have been obtained by gel filtration of arc-discharge grown SWNTs with diameters in the range 1.2–1.6 nm. Multi-laser Raman spectroscopy confirmed the presence of less than 2% of metallic SWNTs (m-SWNTs) in the s-SWNT enriched sample. Measurement of ~50 individual tubes in Pd-contacted devices with channel length 200 nm showed on/off ratios of >104, conductances of 1.38–5.8 μS, and mobilities in the range 40–150 cm2•V/s. Short channel multi-tube devices with ~100 tubes showed lower on/off ratios due to residual m-SWNTs, although the on-current was greatly increased relative to the devices made from individual tubes.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-012-0219-0

Publisher

Tsinghua University Press

Recommended Citation

Justin Wu,Liming Xie,Guosong Hong,Hong En Lim,Boanerges Thendie,Yasumitsu Miyata,Hisanori Shinohara,Hongjie Dai, Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes. NanoRes.2012, 5(6): 388–394