Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes
Single-walled carbon nanotubes, separation, Raman spectroscopy, field-effect transistor
ABSTRACT Semiconducting single-walled carbon nanotubes (s-SWNTs) with a purity of ~98% have been obtained by gel filtration of arc-discharge grown SWNTs with diameters in the range 1.2–1.6 nm. Multi-laser Raman spectroscopy confirmed the presence of less than 2% of metallic SWNTs (m-SWNTs) in the s-SWNT enriched sample. Measurement of ~50 individual tubes in Pd-contacted devices with channel length 200 nm showed on/off ratios of >104, conductances of 1.38–5.8 μS, and mobilities in the range 40–150 cm2•V/s. Short channel multi-tube devices with ~100 tubes showed lower on/off ratios due to residual m-SWNTs, although the on-current was greatly increased relative to the devices made from individual tubes.
Tsinghua University Press
Justin Wu,Liming Xie,Guosong Hong,Hong En Lim,Boanerges Thendie,Yasumitsu Miyata,Hisanori Shinohara,Hongjie Dai, Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes. NanoRes.2012, 5(6): 388–394