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Nano Research

Article Title

Effect of carbon nanotube network morphology on thin film transistor performance

Authors

Marina Y. Timmermans, NanoMaterials Group, Department of Applied Physics & Center for New Materials, Aalto University, 00076 Espoo, Finland
David Estrada, Department of Electrical & Computer Eng., Micro & Nanotechnology Lab, University of Illinois, Urbana, IL 61801, USA
Albert G. Nasibulin, NanoMaterials Group, Department of Applied Physics & Center for New Materials, Aalto University, 00076 Espoo, Finland
Joshua D. Wood, Department of Electrical & Computer Eng., Micro & Nanotechnology Lab, University of Illinois, Urbana, IL 61801, USA Beckman Institute, University of Illinois, Urbana, IL 61801, USA
Ashkan Behnam, Department of Electrical & Computer Eng., Micro & Nanotechnology Lab, University of Illinois, Urbana, IL 61801, USA
Dong-ming Sun, Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
Yutaka Ohno, Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
Joseph W. Lyding, Department of Electrical & Computer Eng., Micro & Nanotechnology Lab, University of Illinois, Urbana, IL 61801, USA Beckman Institute, University of Illinois, Urbana, IL 61801, USA
Abdou Hassanien, National Institute of Chemistry, 19 Hajdrihova, 1000 Ljubljana, Slovenia Electronics and Photonics Research Institute, AIST, 1-1-1 Umezono, Tsukuba, Ibaraki ken 305-8568, Japan
Eric Pop, Department of Electrical & Computer Eng., Micro & Nanotechnology Lab, University of Illinois, Urbana, IL 61801, USA Beckman Institute, University of Illinois, Urbana, IL 61801, USA
Esko I. Kauppinen, NanoMaterials Group, Department of Applied Physics & Center for New Materials, Aalto University, 00076 Espoo, Finland

Keywords

Carbon nanotube network, thin film transistor, morphology, mobility, image processing, hysteresis

Abstract

ABSTRACT The properties of electronic devices based on carbon nanotube networks (CNTNs) depend on the carbon nanotube (CNT) deposition method used, which can yield a range of network morphologies. Here, we synthesize single-walled CNTs using an aerosol (floating catalyst) chemical vapor deposition process and deposit CNTs at room temperature onto substrates as random networks with various morphologies. We use four CNT deposition techniques: electrostatic or thermal precipitation, and filtration through a filter followed by press transfer or dissolving the filter. We study the mobility using pulsed measurements to avoid hysteresis, the on/off ratio, and the electrical noise properties of the CNTNs, and correlate them to the network morphology through careful imaging. Among the four deposition methods thermal precipitation is found to be a novel approach to prepare high-performance, partially aligned CNTNs that are dry-deposited directly after their synthesis. Our results provide new insight into the role of the network morphologies and offer paths towards tunable transport properties in CNT thin film transistors.

Graphical Abstract

Publisher

Tsinghua University Press

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