"Densely aligned graphene nanoribbons at ∼35 nm pitch" by Liying Jiao, Liming Xie et al.

Article Title

Densely aligned graphene nanoribbons at ∼35 nm pitch

Authors

Liying Jiao, Department of Chemistry, Stanford University, Stanford, California 94305, USA
Liming Xie, Department of Chemistry, Stanford University, Stanford, California 94305, USA
Hongjie Dai, Department of Chemistry, Stanford University, Stanford, California 94305, USA

Keywords

Graphene nanoribbons, aligned array, diblock copolymer, plasma etching

Abstract

ABSTRACT We demonstrate the fabrication of high-density aligned graphene nanoribbon (GNR) arrays by plasma etching of graphene sheets through a nanomask derived from self-assembled poly (styrene-block-dimethylsiloxane) (PS–PDMS) diblock copolymer films. This approach produces parallel GNR (~12 nm wide) arrays at ~35 nm pitch. Microscopy and polarized Raman spectroscopy are used to reveal the high-degree of alignment of GNRs. Electrical measurements show that parallel GNRs in a 1 μm wide region can deliver ~0.38 mA current at a source–drain bias of 1 V. This novel patterning approach allows for the fabrication of densely aligned GNR arrays on various substrates and could provide a route to large scale integration of GNRs into nanoelectronics, optoelectronics and biosensors.