Article Title

Strain-induced D band observed in carbon nanotubes

Authors

Chia-Chi Chang, Department of Physics, University of Southern California, Los Angeles, CA 90089, USA
Chun-Chung Chen, Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA
Wei-Hsuan Hung, Department of Materials Science and Engineering, Feng Chia University
I-Kai Hsu, Department of Materials Science,University of Southern California, Los Angeles, CA 90089, USA
Marcos A. Pimenta, Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970, Brazil
Stephen B. Cronin, Department of Physics, University of Southern California, Los Angeles, CA 90089, USA Department of Electrical Engineering, University of Southern California, Los Angeles, CA 90089, USA

Keywords

SWCNTs, Raman, D band, defects, strain, sp2 bond

Abstract

ABSTRACT We report the emergence of the D band Raman mode in single-walled carbon nanotubes under large axial strain. The D to G mode Raman intensity ratio (ID/IG) is observed to increase with strain quadratically by more than a factor of 100-fold. Up to 5% strain, all changes in the Raman spectra are reversible. The emergence of the D band, instead, arises from the reversible and elastic symmetry-lowering of the sp2 bonds structure. Beyond 5%, we observe irreversible changes in the Raman spectra due to slippage of the nanotube from the underlying substrate, however, the D band intensity resumes its original pre-strain intensity, indicating that no permanent defects are formed.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-012-0269-3

Publisher

Tsinghua University Press

Recommended Citation

Chia-Chi Chang,Chun-Chung Chen,Wei-Hsuan Hung,I. -Kai Hsu,Marcos A. Pimenta,Stephen B. Cronin, Strain-induced D band observed in carbon nanotubes. NanoRes.2012, 5(12): 854–862