Article Title

Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties

Authors

Yuan Huang, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Fei Liu, State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
Qiang Luo, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Yuan Tian, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Qiang Zou, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Chen Li, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Chengmin Shen, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Shaozhi Deng, State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
Changzhi Gu, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Ningsheng Xu, State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, and School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China
Hongjun Gao, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Keywords

Boron carbide nanowires, patterned, field emission properties, flexible

Abstract

ABSTRACT Large-area patterned boron carbide nanowires (B4C NWs) have been synthesized using chemical vapor deposition (CVD). The average diameter of B4C NWs is about 50 nm, with a mean length of 20 μm. The B4C NWs have a single-crystal structure and conductivities around 5.1 × 10–2 Ω–1•cm–1. Field emission measurements of patterned B4C NWs films show that their turn-on electric field is 2.7 V/μm, lower than that of continuous B4C NWs films. A single nanowire also exhibits excellent flexibility under high-strain bending cycles without deformation or failure. All together, this suggests that B4C NWs are a promising candidate for flexible cold cathode materials.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-012-0273-7

Publisher

Tsinghua University Press

Recommended Citation

Yuan Huang,Fei Liu,Qiang Luo,Yuan Tian,Qiang Zou,Chen Li,Chengmin Shen,Shaozhi Deng,Changzhi Gu,Ningsheng Xu,Hongjun Gao, Fabrication of patterned boron carbide nanowires and their electrical, field emission, and flexibility properties. NanoRes.2012, 5(12): 896–902