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Nano Research

Article Title

Anomalous anisotropic magnetoresistance in topological insulator films

Authors

Jian Wang, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA
Handong Li, Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong, China State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
Cuizu Chang, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Department of Physics, Tsinghua University, Beijing 100084, China
Ke He, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Joon Sue Lee, The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA
Haizhou Lu, Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong, China
Yi Sun, International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
Xucun Ma, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Nitin Samarth, The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA
Shunqing Shen, Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong, China
Qikun Xue, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Department of Physics, Tsinghua University, Beijing 100084, China
Maohai Xie, Physics Department, The University of Hong Kong, Pokfulam Road, Hong Kong, China
Moses H. W. Chan, The Center for Nanoscale Science and Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802-6300, USA

Keywords

Topological insulator, Bi2Se3 film, transport property, magnetoresistance, low temperature

Abstract

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle- resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurements, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Interestingly, measurements under an in-plane magnetic field, along and perpendicular to the bias current show anomalous opposite magnetoresistance.

Graphical Abstract

Publisher

Tsinghua University Press

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