Article Title

Optical properties of laterally aligned Si nanowires for transparent electronics applications

Authors

Dong Hyun Lee, Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea
Jaeseok Yi, Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea
Won Woo Lee, Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea
Ungyu Paik, Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea Department of Energy Engineering, Hanyang University, Seoul 133-791, Korea
John A. Rogers, Department of Materials Science and Engineering, Department of Chemistry, Department of Mechanical Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
Won Il Park, Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, Korea

Keywords

Si nanowire, optical properties, transparent thin film transistor, finite-difference time-domain (FDTD) modeling

Abstract

We have investigated the optical properties of laterally aligned Si nanowire (SiNW) arrays in order to explore their potential applicability in transparent electronics. The SiNW array exhibited good optical transparency in the visible spectral range with a transmittance of ~90% for a NW density of ~20−25 per 10 μm. In addition, polarization-dependent measurements revealed a variation in transmittance in the range of 80%−95% depending on the angle between the polarization of incident light and the NW axis. Using the SiNWs, we demonstrated that transparent transistors exhibit good optical transparency (greater than 80%) and showed typical p-type SiNW transistor characteristics.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-011-0138-5

Publisher

Tsinghua University Press

Recommended Citation

Dong Hyun Lee,Jaeseok Yi,Won Woo Lee,Ungyu Paik,John A. Rogers,Won Il Park, Optical properties of laterally aligned Si nanowires for transparent electronics applications. NanoRes.2011, 4(9): 817–823