"Assessment of high-frequency performance limits of graphene field-effe" by Jyotsna Chauhan and Jing Guo

Article Title

Assessment of high-frequency performance limits of graphene field-effect transistors

Authors

Jyotsna Chauhan, Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611-6130, USA
Jing Guo, Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611-6130, USA

Keywords

Field effect transistor (FET), radio frequency (RF), carbon nanotube (CNT), intrinsic cut-off frequency, transconductance

Abstract

ABSTRACT High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20 nm have been examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is significant for sub-100 nm graphene FETs, it is possible to achieve a good transconductance and ballistic on–off ratio larger than 3 even at a channel length of 20 nm. At a channel length of 20 nm, the intrinsic cut-off frequency remains at a few THz for various gate insulator thickness values, but a thin gate insulator is necessary for a good transconductance and smaller degradation of cut-off frequency in the presence of parasitic capacitance. The intrinsic cut-off frequency is close to the LC characteristic frequency set by graphene kinetic inductance (L) and quantum capacitance (C), which is about 100 GHz•μm divided by the gate length.