Article Title

Selective growth of ZnO nanorods on SiO₂/Si substrates using a graphene buffer layer

Authors

Won Mook Choi, Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi 446-712, Republic of Korea
Kyung-Sik Shin, School of Advanced Materials Science and Engineering, Sungkyunkwan (SKKU) Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
Hyo Sug Lee, Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi 446-712, Republic of Korea
Dukhyun Choi, Department of Mechanical Engineering, Kyung Hee University, Yongin, Gyeonggi 446-701, Republic of Korea
Kihong Kim, Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi 446-712, Republic of Korea
Hyeon-Jin Shin, Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi 446-712, Republic of Korea
Seon-Mi Yoon, Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi 446-712, Republic of Korea
Jae-Young Choi, Samsung Advanced Institute of Technology, Giheung, Yongin, Gyeonggi 446-712, Republic of Korea
Sang-Woo Kim, School of Advanced Materials Science and Engineering, Sungkyunkwan (SKKU) Advanced Institute of Nanotechnology (SAINT), Center for Human Interface Nanotechnology (HINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea

Keywords

Graphene, ZnO, nanorod, heterojunction, selective growth, solution

Abstract

A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO–graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO–graphene materials have promising applications in future flexible electronic and optical devices.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-011-0100-6

Publisher

Tsinghua University Press

Recommended Citation

Won Mook Choi,Kyung-Sik Shin,Hyo Sug Lee,Dukhyun Choi,Kihong Kim,Hyeon-Jin Shin,Seon-Mi Yoon,Jae-Young Choi,Sang-Woo Kim, Selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer. NanoRes.2011, 4(5): 440–447