Selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer
Graphene, ZnO, nanorod, heterojunction, selective growth, solution
A promising strategy for the selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer in a low temperature solution process is described. High densities of ZnO nanorods were grown over a large area and most ZnO nanorods were vertically well-aligned on graphene. Furthermore, selective growth of ZnO nanorods on graphene was realized by applying a simple mechanical treatment, since ZnO nanorods formed on graphene are mechanically stable on an atomic level. These results were confirmed by first principles calculations which showed that the ZnO–graphene binding has a low destabilization energy. In addition, it was found that ZnO nanorods grown on SiO2/Si with a graphene buffer layer have better optical properties than ZnO nanorods grown on bare SiO2/Si. The nanostructured ZnO–graphene materials have promising applications in future flexible electronic and optical devices.
Tsinghua University Press
Won Mook Choi,Kyung-Sik Shin,Hyo Sug Lee,Dukhyun Choi,Kihong Kim,Hyeon-Jin Shin,Seon-Mi Yoon,Jae-Young Choi,Sang-Woo Kim, Selective growth of ZnO nanorods on SiO2/Si substrates using a graphene buffer layer. NanoRes.2011, 4(5): 440–447