High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors
Silicon nanowire (SiNW), field-effect transistor (FET), surface treatment, inverter, ring oscillator
ABSTRACT We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications.
Tsinghua University Press
Ruo-Gu Huang,Douglas Tham,Dunwei Wang,James R. Heath, High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors. NanoRes.2011, 4(10): 1005–1012