Article Title

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

Authors

Caroline Chèze, Paul-Drude-Institut für Festkrperelektronik, 5-7 Hausvogteiplatz, Berlin 10117, Germany
Lutz Geelhaar, Paul-Drude-Institut für Festkrperelektronik, 5-7 Hausvogteiplatz, Berlin 10117, Germany
Oliver Brandt, Paul-Drude-Institut für Festkrperelektronik, 5-7 Hausvogteiplatz, Berlin 10117, Germany
Walter M. Weber, NaMLab gGmbH, Dresden 01187, Germany
Henning Riechert, Paul-Drude-Institut für Festkrperelektronik, 5-7 Hausvogteiplatz, Berlin 10117, Germany
Steffen Münch, Technische Physik, Universitt Würzburg, Am Hubland, Würzburg 97074, Germany
Ralph Rothemund, Technische Physik, Universitt Würzburg, Am Hubland, Würzburg 97074, Germany
Stephan Reitzenstein, Technische Physik, Universitt Würzburg, Am Hubland, Würzburg 97074, Germany
Alfred Forchel, Technische Physik, Universitt Würzburg, Am Hubland, Würzburg 97074, Germany
Thomas Kehagias, Physics Department, Aristotle University, Thessaloniki 54124, Greece
Philomela Komninou, Physics Department, Aristotle University, Thessaloniki 54124, Greece
George P. Dimitrakopulos, Physics Department, Aristotle University, Thessaloniki 54124, Greece
Theodoros Karakostas, Physics Department, Aristotle University, Thessaloniki 54124, Greece

Keywords

Nanowire, nanocolumn, molecular beam epitaxy (MBE), photoluminescence, stacking faults, catalyst

Abstract

GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and Ⅴ/Ⅲ ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-010-0013-9

Publisher

Tsinghua University Press

Recommended Citation

Caroline Chèze,Lutz Geelhaar,Oliver Brandt,Walter M. Weber,Henning Riechert,Steffen Münch,Ralph Rothemund,Stephan Reitzenstein,Alfred Forchel,Thomas Kehagias,Philomela Komninou,George P. Dimitrakopulos,Theodoros Karakostas, Direct comparison of catalyst-free and catalyst-induced GaN nanowires. NanoRes.2010, 3: 528–536