Direct comparison of catalyst-free and catalyst-induced GaN nanowires
Nanowire, nanocolumn, molecular beam epitaxy (MBE), photoluminescence, stacking faults, catalyst
GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and Ⅴ/Ⅲ ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.
Tsinghua University Press
Caroline Chèze,Lutz Geelhaar,Oliver Brandt,Walter M. Weber,Henning Riechert,Steffen Münch,Ralph Rothemund,Stephan Reitzenstein,Alfred Forchel,Thomas Kehagias,Philomela Komninou,George P. Dimitrakopulos,Theodoros Karakostas, Direct comparison of catalyst-free and catalyst-induced GaN nanowires. NanoRes.2010, 3: 528–536