In situ etching for total control over axial and radial nanowire growth
MOVPE, nanowire growth, in situ etching, photoluminescence
We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.
Tsinghua University Press
Magnus T. Borgström,Jesper Wallentin,Johanna Trägårdh,Peter Ramvall,Martin Ek,L. Reine Wallenberg,Lars Samuelson,Knut Deppert, In situ etching for total control over axial and radial nanowire growth. NanoRes.2010, 3: 264–270