Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices
Suspended graphene, shadow mask, mobility, lithography-free, e-beam evaporation
We present a lithography-free technique for fabrication of clean, high quality graphene devices. This technique is based on evaporation through hard Si shadow masks, and eliminates contaminants introduced by lithographical processes. We demonstrate that devices fabricated by this technique have significantly higher mobility values than those obtained by standard electron beam lithography. To obtain ultra-high mobility devices, we extend this technique to fabricate suspended graphene samples with mobilities as high as 120 000 cm2/(V•s).
Tsinghua University Press
Wenzhong Bao,Gang Liu,Zeng Zhao,Hang Zhang,Dong Yan,Aparna Deshpande,Brian LeRoy,Chun Ning Lau, Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices. NanoRes.2010, 3: 98–102