Home > NANO-RESEARCH > Vol. 3 (2010) > No. 12
Article Title
Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit
Keywords
Single nanowires, impurities, doping, excitonic luminescence, scaling
Abstract
Single, free-standing GaN nanowires grown by plasma-assisted molecular-beam epitaxy have been investigated with low temperature micro-photoluminescence. The quantitative analysis of the luminescence spectra of around 100 nanowires revealed that each nanowire exhibits its own individual spectrum. A significant fraction of nanowires exclusively emits at energies corresponding to either surface-donor-bound or free excitons, demonstrating that optical properties of individual nanowires are determined by a few impurity atoms alone. The number of impurities per nanowire and their location within the nanowires varies according to Poissonian statistics.
Graphical Abstract
Publisher
Tsinghua University Press
Recommended Citation
Carsten Pfüller,Oliver Brandt,Timur Flissikowski,Caroline Chèze,Lutz Geelhaar,Holger T. Grahn,Henning Riechert, Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit. NanoRes.2010, 3(12): 881–888