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Nano Research

Article Title

Statistical analysis of excitonic transitions in single, free-standing GaN nanowires: Probing impurity incorporation in the poissonian limit

Keywords

Single nanowires, impurities, doping, excitonic luminescence, scaling

Abstract

Single, free-standing GaN nanowires grown by plasma-assisted molecular-beam epitaxy have been investigated with low temperature micro-photoluminescence. The quantitative analysis of the luminescence spectra of around 100 nanowires revealed that each nanowire exhibits its own individual spectrum. A significant fraction of nanowires exclusively emits at energies corresponding to either surface-donor-bound or free excitons, demonstrating that optical properties of individual nanowires are determined by a few impurity atoms alone. The number of impurities per nanowire and their location within the nanowires varies according to Poissonian statistics.

Graphical Abstract

Publisher

Tsinghua University Press

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