Bending-induced conductance increase in individual semiconductor nanowires and nanobelts
ZnO nanowires, bending strain, piezoresistance, conductance enhancement
Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Signifi cant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.
Tsinghua University Press
Xiaobing Han,Guangyin Jing,Xinzheng Zhang,Renmin Ma,Xuefeng Song,Jun Xu,Zhimin Liao,Ning Wang,Dapeng Yu, Bending-induced conductance increase in individual semiconductor nanowires and nanobelts. NanoRes.2009, 2: 553-557