Nano Research

Article Title

Bending-induced conductance increase in individual semiconductor nanowires and nanobelts


ZnO nanowires, bending strain, piezoresistance, conductance enhancement


Reliable ohmic contacts were established in order to study the strain sensitivity of nanowires and nanobelts. Signifi cant conductance increases of up to 113% were observed on bending individual ZnO nanowires or CdS nanobelts. This bending strain-induced conductance enhancement was confirmed by a variety of bending measurements, such as using different manipulating tips (silicon, glass or tungsten) to bend the nanowires or nanobelts, and is explained by bending-induced effective tensile strain based on the principle of the piezoresistance effect.

Graphical Abstract


Tsinghua University Press