"Vacancy ordering and lithium insertion in III<sub>2</sub>VI<sub>3</sub" by Hailin Peng, Xiao Feng Zhang et al.

Article Title

Vacancy ordering and lithium insertion in III₂VI₃ nanowires

Authors

Hailin Peng, Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
Xiao Feng Zhang, Electron Microscope Division, Hitachi High Technologies America, Inc., 5100 Franklin Drive, Pleasanton, California 94588, USA
Ray D. Twesten, Gatan Inc., 5933 Coronado Lane, Pleasanton, California 94588, USA
Yi Cui, Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

Keywords

Nanowire (NW), vacancy ordering, superlattice, Ⅲ2Ⅵ3, lithium insertion

Abstract

Superlattice structures resulting from vacancy ordering have been observed in many materials. Here we report vacancy ordering behavior in 2 3 nanowires. The formation of layer-like structural vacancies has been achieved during the synthesis of In2Se3 nanowires through a vapor-transport route. Doping In2Se3 nanowires with small amounts of Ga during synthesis can completely change the structural vacancy ordering from a layer-like to a screw-like pattern for (InxGa1 x)2Se3 nanowires. Lithium atoms can ﬁ ll in the layer-like structural vacancies of In2Se3 nanowires and generate new types of vacancy and lithium atom ordering superlattices. The screw-patterned vacancies of (InxGa1 x)2Se3 nanowires show reversible lithium insertion. Our results contribute to the understanding of structure property correlations of 23 materials used in lithium ion storage, photovoltaics, and phase change memory.